Abstract: Tunneling field-effect transistors (TFETs) have gained a great deal of interest recently due to their potential to reduce power dissipation in integrated circuits. One major challenge for ...
Abstract: This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at ...
An advanced gate design could reshape EV and data center power systems. Mayank Shrivastava (third from right) holding a representative power device 8″ wafer, with some of his PhD students who work on ...
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