Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
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China unveils what it claims is the tiniest, most efficient transistor ever
Researchers at Peking University have built a transistor they say is the world’s smallest and most energy-efficient, ...
Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...
For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...
The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...
Alternatively, you may want to connect its inputs and output in parallel with IC1.C to increase its drive power to the transistor test circuit. IC1.A and IC1.B together with R2, R3 and C1 form an ...
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