The previous columns in this series discussed the advantages of eGaN FETs in high frequency hard-switching, resonant, and soft-switching designs. In this installment, highly resonant, loosely coupled, ...
Researchers from the University of Science and Technology of China (USTC) and collaborators have manufactured a high-performance normally-off diamond p-FET featuring high-density 2D hole gas (HG) with ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ...
The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance. The EPC9192 features a modular design that allows for ...
See Part 1, Part 2, and Part 3 of this series. The previous FET circuits pertained to voltage-controlled signal amplitude circuits. That is, the input signal’s amplitude can be changed at the output ...
Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.
Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...
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