Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices, a key component in ...
Murray Thom, vice president for quantum technology evangelism for D-Wave, knows that his company for more than two decades has played a key role in a somewhat unusual industry. “One of the things ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
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